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Micron Technology
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Micron Technology Company Overview

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Micron Technology

● Active
Semiconductors · Boise, Idaho · Est. 1978
SemiconductorsMemoryDRAMNANDAI Infrastructure↗ Website
$94B
Valuation
$27.7B
Revenue
46k+
Employees
1978
Founded

Micron Technology is one of the world's largest semiconductor memory and storage companies, designing and manufacturing DRAM, NAND flash, and NOR flash memory chips used in data center servers, AI accelerators, smartphones, automotive systems, and consumer electronics. Micron's High Bandwidth Memory (HBM) and DDR5 DRAM products are critical components in AI infrastructure, powering GPU memory for NVIDIA, AMD, and custom AI accelerator designs.

Recent Press
5 items
Press Release·2025-12-18
Micron Reports Record Q1 FY2026 Revenue of $8.7B Driven by HBM Demand
Micron reported fiscal Q1 2026 revenue of $8.71 billion, up 84% year-over-year, driven by surging demand for HBM3E memory in AI accelerator platforms. HBM revenue more than doubled sequentially as Micron ramped supply to NVIDIA H200 and next-generation GPU customers.
Product Launch·2025-11-05
Micron Launches Automotive HBM for In-Vehicle AI Compute Platforms
Micron introduced automotive-grade HBM memory targeting next-generation in-vehicle compute platforms for Level 3 and Level 4 autonomous driving systems, meeting AEC-Q100 Grade 2 reliability requirements for high-bandwidth AI inference memory in automotive domain controllers.
Partnership·2025-09-04
Micron Qualifies HBM3E for NVIDIA Blackwell GPU Architecture
Micron announced qualification of its HBM3E memory for NVIDIA's Blackwell GPU architecture, enabling Micron to supply HBM for NVIDIA's next-generation AI training and inference accelerators. Micron's HBM3E delivers 1.2 TB/s bandwidth per stack at lower power than previous HBM generations.
Press Release·2025-07-14
Micron Begins Production at New Idaho Fab Using 1-Gamma DRAM Process
Micron commenced limited production at its expanded Boise, Idaho DRAM fabrication facility using its 1-gamma process node, the company's most advanced DRAM technology offering 15% better power efficiency and 25% higher bit density than 1-beta process.
Award·2025-04-25
Micron Receives $6.1B CHIPS Act Grant for U.S. Memory Manufacturing Expansion
The U.S. Department of Commerce awarded Micron a $6.1 billion CHIPS Act direct funding grant to support construction of two new DRAM fabrication facilities in Syracuse, New York and Boise, Idaho, representing the largest CHIPS Act award to a memory manufacturer and advancing U.S. semiconductor supply chain independence.
Company History
9 milestones
Micron Technology was founded in Boise, Idaho by Ward Parkinson, Dennis Wilson, Doug Pitman, and Joe Parkinson with $1,000 in seed money as a semiconductor design consulting firm before pivoting to DRAM chip manufacturing.

Micron Technology Organization Structure & Team

Org Chart
46,000 employees · Click a leader to explore their team
38,950 across 12 departments
Chief Executive Officer
Sanjay Mehrotra
Mark Murphy — Departments
· 38950 people across 12 depts

Micron Technology Financials, Revenue & Market Share

Annual Revenue
$27.7B
+62% vs prior year
YoY Growth
+62%
From $27.7B to $27.7B
Revenue / Employee
$602K
Annual revenue per full-time employee
Revenue Growth
2021
2022
2023
2024
2025
$27.7B
$30.8B
$15.5B
$17.1B
$27.7B
Market Share
Global DRAM Market
24%
share
Samsung Memory
43%
SK Hynix
28%
Micron Technology
24%
CXMT
3%
Others
2%
$180B
TAM
$120B
SAM
$27.7B
SOM
Revenue Streams
DRAM67%
NAND Flash30%
Other (NOR, Licensing)3%
Business Units
Compute & Networking Business Unit58%
Serves data center, cloud, and AI customers with DDR5 server DIMMs, HBM3E for GPU memory, and CXL memory expansion products for hyperscale and enterprise compute platforms.
Mobile Business Unit20%
Supplies LPDDR5X mobile DRAM and NAND storage to smartphone OEMs and mobile SoC vendors including Qualcomm and MediaTek for flagship and mid-range mobile platform designs.
Embedded Business Unit14%
Delivers automotive-grade DRAM and NAND, industrial memory, and IoT memory solutions meeting AEC-Q100 and extended temperature reliability requirements for automotive Tier 1 and industrial OEM customers.
Storage Business Unit8%
Sells Crucial-brand consumer SSDs, enterprise SATA and NVMe SSDs, and component NAND to PC OEMs, system integrators, and retail channels through direct and distribution channels.

Micron Technology Internal Tools & Processes

Internal Tools
12 departments
DRAM Design Engineering4800 people · 3 roles
Standards & Certifications
10 standards
Compliance frameworks, security audits, and quality certifications this company maintains.
Quality
ISO 9001
Certified
Micron Technology maintains ISO 9001 quality management certification across its DRAM and NAND flash wafer fabrication and assembly/test operations, ensuring consistent process quality controls for memory chips shipped to data center, mobile, and automotive customers.
Quality
IATF 16949
Certified
Micron holds IATF 16949 automotive quality management certification for facilities producing AEC-Q100-qualified DRAM and NAND flash memory for automotive customers, meeting the traceability, PPAP, and control plan requirements of automotive Tier 1 suppliers and OEMs.
Quality
AEC-Q100
Certified
Micron qualifies its automotive-grade LPDDR5X, DDR4, and NAND flash products to AEC-Q100 stress test requirements, verifying reliability across Grade 1 (-40°C to 125°C) and Grade 2 (-40°C to 105°C) temperature ranges for ADAS, infotainment, and powertrain memory applications.
Quality
JEDEC Standards
Certified
Micron designs and qualifies all DRAM and NAND products in compliance with JEDEC memory standards including JESD79F (DDR5), JESD209F (LPDDR5X), and JESD316 (HBM3E), ensuring interoperability with platform designs from Intel, AMD, NVIDIA, Qualcomm, and Apple.
Environmental
ISO 14001
Certified
Micron holds ISO 14001 environmental management certification at its fabrication and assembly sites, supporting Micron's sustainability targets including reduction of greenhouse gas emissions, water use, and chemical waste from its memory chip manufacturing operations globally.
Environmental
RoHS
Certified
Micron's full memory product portfolio — including DDR5, HBM3E, LPDDR5X, and NAND flash — complies with EU RoHS Directive 2011/65/EU, ensuring all memory chips are free from restricted hazardous substances required for sale in European markets.
Environmental
REACH
Certified
Micron complies with EU REACH chemical regulation governing substances used in semiconductor manufacturing processes at its wafer fabrication facilities, maintaining SVHC declarations and supply chain documentation for chemicals used in lithography, etch, and deposition processes.
Security
SOC 2 Type II
Certified
Micron maintains SOC 2 Type II certification for its enterprise customer-facing digital systems and data management operations, providing security and availability assurance to enterprise customers who access Micron's customer portal, design support tools, and supply chain management systems.
Regulatory
EAR/ITAR
Compliant
Micron complies with U.S. Export Administration Regulations (EAR) and ITAR for memory products with defense and dual-use applications, maintaining an export compliance program covering HBM memory for defense AI systems and advanced DRAM products subject to BIS export controls.
Regulatory
CHIPS Act Compliance
Compliant
Micron adheres to CHIPS and Science Act guardrail provisions attached to its $6.1 billion direct funding grant, including restrictions on technology sharing with foreign entities of concern, domestic content requirements, and profit-sharing obligations for facilities constructed using CHIPS Act funding.

Micron Technology Interview Preparation

Interview Prep
Role-specific interview questions and keywords. Select a department, then click any role to prepare.
DRAM Design Engineering· 3 roles

Micron Technology Products & Competitors

Product Suite
5 products · select one to explore
Semiconductors
Hardware
Micron HBM3E
The memory behind AI

Micron HBM3E (High Bandwidth Memory 3E) is a stacked DRAM memory solution delivering 1.2 TB/s bandwidth per stack, designed specifically for AI training and inference accelerators including NVIDIA H200 and upcoming AI GPU platforms. It uses 3D die stacking with through-silicon vias (TSVs) to pack up to 36 GB of memory at extreme bandwidth densities required for large language model training and scientific computing workloads.

Use Cases
Providing 1.2 TB/s memory bandwidth for LLM gradient computation during training runs on NVIDIA H200 GPU clusters in hyperscale data centersEnabling real-time KV-cache storage and retrieval during transformer inference at token generation rates exceeding 200 tokens/second per GPUSupporting scientific simulation workloads including molecular dynamics and computational fluid dynamics that are bandwidth-limited on conventional DDR5 memory
No image
Key Customers
NVDA
NVIDIA
AMD
AMD
INTC
Intel
Competitive Intelligence
VSSK Hynix HBM3E
THEM

SK Hynix HBM3E is a stacked DRAM memory product competing directly with Micron HBM3E, serving as the primary HBM supplier for NVIDIA H100 and H200 GPUs with comparable bandwidth and capacity specifications.

EDGE

Micron's HBM3E targets thermal efficiency advantages with lower power consumption per terabyte of bandwidth delivered, reducing cooling requirements in high-density AI accelerator deployments

VSSamsung HBM3E
THEM

Samsung HBM3E is a high bandwidth memory product targeting AI accelerator memory applications with 1.15 TB/s bandwidth, competing for GPU memory design wins at NVIDIA, AMD, and custom silicon customers.

EDGE

Micron HBM3E achieved NVIDIA H200 qualification delivering 1.2 TB/s bandwidth with competitive capacity at 36 GB per stack, establishing Micron as a qualified HBM3E supplier alongside the Korean memory incumbents

VSRambus HBM PHY
THEM

Rambus provides HBM memory interface IP and PHY controllers that enable custom ASIC designers to integrate HBM memory without designing their own memory controller, targeting TPU-style AI accelerator designs.

EDGE

Micron supplies the physical HBM memory die rather than interface IP, competing at the memory device level rather than controller IP level where Rambus operates

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